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| Final data SPP02N80C3 SPA02N80C3 VDS RDS(on) ID P-TO220-3-31 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 800 2.7 2 V A P-TO220-3-1 1 2 3 Type SPP02N80C3 SPA02N80C3 Package P-TO220-3-1 Ordering Code Q67040-S4432 Marking 02N80C3 02N80C3 P-TO220-3-31 Q67040S4634 Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Symbol SPP ID 2 1.2 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 6 90 0.05 2 20 30 42 Value SPA Unit A 21) 1.21) 6 90 0.05 2 20 30 30.5 W C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=1A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=2A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature -55...+150 Page 1 2003-10-14 Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 640 V, I D = 2 A, Tj = 125 C SPP02N80C3 SPA02N80C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T j=25C unless otherwise specified Symbol Conditions Parameter min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=2A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=120A, VGS=VDS V DS=800V, VGS=0V, Tj=25C Tj=150C Symbol min. RthJC RthJC_FP RthJA RthJA_FP Tsold - Values typ. max. 3 4.1 62 80 260 Unit K/W C Values typ. 870 3 0.5 2.4 6.5 0.7 max. 3.9 Unit V 800 2.1 - A 5 50 100 2.7 nA Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=1.2A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Page 2 2003-10-14 Final data Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 4) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=640V, ID=2A, V GS=0 to 10V V DD=640V, ID=2A SPP02N80C3 SPA02N80C3 Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=1.2A V GS=0V, V DS=25V, f=1MHz Values typ. 1.5 290 130 6 11.2 20.6 25 15 65 18 max. 75 23 - Unit S pF Effective output capacitance, 3) Co(er) V GS=0V, V DS=0V to 480V td(on) tr td(off) tf V DD=400V, V GS=0/10V, ID=2A, RG=47 - ns - 1 5 9 6 12 - nC V(plateau) V DD=640V, ID=2A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-10-14 Final data Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.067 0.126 0.215 0.655 0.569 0.161 Tj P tot (t) C th1 C th2 C th,n T am b SPP02N80C3 SPA02N80C3 Symbol IS I SM VSD t rr Q rr I rrm di rr/dt Conditions min. TC=25C Values typ. 1 520 2 6 200 max. 2 6 1.2 - Unit A VGS =0V, I F=IS VR =640V, IF=IS , diF/dt=100A/s - V ns C A A/s Tj=25C Value SPA 0.067 0.126 0.215 0.419 0.719 2.543 R th1 Unit K/W Symbol SPP Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPA 0.0001651 0.0002432 0.0007613 0.003835 0.412 Unit 0.00004221 0.00004221 Ws/K 0.0001651 0.0002432 0.0007613 0.002455 0.412 E xternal H eatsink Page 4 2003-10-14 Final data 1 Power dissipation Ptot = f (TC) 50 SPP02N80C3 SPP02N80C3 SPA02N80C3 2 Power dissipation FullPAK Ptot = f (TC) 35 W 40 35 W 25 Ptot 30 25 20 15 10 Ptot 20 15 10 5 5 0 0 0 0 20 40 60 80 100 120 C 160 15 30 45 60 75 90 105 120 TC C 150 Tj 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC =25C 10 1 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 1 A A 10 0 10 0 ID 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC ID 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 2 10 V VDS 3 Page 5 2003-10-14 Final data 5 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 SPP02N80C3 SPA02N80C3 6 Transient thermal impedance FullPAK ZthJC = f (t p) parameter: D = tp/t 10 1 K/W K/W 10 0 10 0 ZthJC 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse ZthJC 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 5.5 8 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS A 3 A 4.5 4 20V 8V 7V 2.4 2.2 6.5V 20V 6.5V 6V ID ID 3.5 3 2.5 2 1.5 1 0.5 2 1.8 1.6 5.5V 6V 1.4 1.2 1 5V 5.5V 0.8 0.6 4.5V 4V 5V 4V 0.4 0.2 26 V VDS 0 0 4 8 12 16 0 0 4 8 12 16 20 20 26 V VDS Page 6 2003-10-14 Final data 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 15 SPP02N80C3 SPA02N80C3 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 1.2 A, VGS = 10 V 15 SPP02N80C3 RDS(on) 4V 4.5V 5V 5.5V 12 RDS(on) 6V 6.5V 20V 11 10 9 8 7 11 9 6 5 4 98% typ 7 3 2 1 5 0 0.5 1 1.5 2 A ID 3 0 -60 -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 5.5 12 Typ. gate charge VGS = f (Q Gate) parameter: ID = 2 A pulsed 16 SPP02N80C3 A 4.5 4 25C V 12 VGS ID 3.5 3 0,2 VDS max 10 0,8 VDS max 8 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 12 14 16 2 150C 6 4 V 20 VGS 0 0 2 4 6 8 10 12 nC 16 Q Gate Page 7 2003-10-14 Final data 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 1 SPP02N80C3 SPP02N80C3 SPA02N80C3 14 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 2 A A 1.6 10 0 1.4 IF IAR 1.2 1 0.8 Tj(START)=25C 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 0.6 0.4 0.2 0 -3 -2 -1 0 10 10 10 10 1 2 3 5 s 10 Tj (START)=125C 10 10 10 VSD t AR 15 Avalanche energy EAS = f (Tj) par.: ID = 1 A, V DD = 50 V 90 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) 980 SPP02N80C3 mJ V 940 V(BR)DSS 70 920 900 880 860 840 820 EAS 60 50 40 30 20 10 0 25 800 780 760 740 45 65 85 105 125 C 155 Tj 720 -60 -20 20 60 100 C 180 Tj Page 8 2003-10-14 Final data 17 Avalanche power losses PAR = f (f ) parameter: E AR=0.05mJ 50 SPP02N80C3 SPA02N80C3 18 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF W 10 3 Ciss PAR 30 C 10 2 20 Coss 10 1 10 Crss 04 10 10 5 Hz f 10 6 10 0 0 100 200 300 400 500 600 V 800 VDS 19 Typ. Coss stored energy Eoss=f(VDS) 3 J Eoss 2 1.5 1 0.5 0 0 100 200 300 400 500 600 700 V 900 VDS Page 9 2003-10-14 Final data SPP02N80C3 SPA02N80C3 Definition of diodes switching characteristics Page 10 2003-10-14 Final data P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 SPP02N80C3 SPA02N80C3 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 2x 2.54 0.25 M 0.5 0.1 2.510.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) 9.98 0.48 0.05 Page 11 2003-10-14 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP02N80C3 SPA02N80C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 12 2003-10-14 |
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